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Please use this identifier to cite or link to this item: https://doi.org/10.1016/S1369-8001(02)00022-7
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dc.titleRaman scattering study of a GaAsN epitaxial layer
dc.contributor.authorYu, G.Y.
dc.contributor.authorShen, Z.X.
dc.contributor.authorLiu, L.
dc.contributor.authorSun, W.X.
dc.date.accessioned2014-10-16T09:52:22Z
dc.date.available2014-10-16T09:52:22Z
dc.date.issued2001-12
dc.identifier.citationYu, G.Y., Shen, Z.X., Liu, L., Sun, W.X. (2001-12). Raman scattering study of a GaAsN epitaxial layer. Materials Science in Semiconductor Processing 4 (6) : 581-584. ScholarBank@NUS Repository. https://doi.org/10.1016/S1369-8001(02)00022-7
dc.identifier.issn13698001
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/98864
dc.description.abstractRaman scattering study of a dilute GaAsN epitaxy layer was carried out at variable temperature and pressure. The localization due to the presence of the N atoms is responsible for the small correlation length in the GaAsN alloy, which is also evident from the broadening and asymmetry of the LO mode of the GaAs-like Raman band. The temperature dependence of the correlation length was analyzed. Nitrogen-induced localization also has a strong influence on the pressure dependence of the Born's effective dynamic charge e*. © 2002 Elsevier Science Ltd. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/S1369-8001(02)00022-7
dc.sourceScopus
dc.subjectGaAsN
dc.subjectPhonon correlation length
dc.subjectRaman scattering
dc.typeConference Paper
dc.contributor.departmentPHYSICS
dc.description.doi10.1016/S1369-8001(02)00022-7
dc.description.sourcetitleMaterials Science in Semiconductor Processing
dc.description.volume4
dc.description.issue6
dc.description.page581-584
dc.identifier.isiut000175066200022
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