1. ScholarBank@NUS
  2. 1. Staff
  3. Staff Publications
Please use this identifier to cite or link to this item: https://doi.org/10.1016/S1369-8001(02)00022-7
DC FieldValue
dc.titleRaman scattering study of a GaAsN epitaxial layer
dc.contributor.authorYu, G.Y.
dc.contributor.authorShen, Z.X.
dc.contributor.authorLiu, L.
dc.contributor.authorSun, W.X.
dc.date.accessioned2014-10-16T09:52:22Z
dc.date.available2014-10-16T09:52:22Z
dc.date.issued2001-12
dc.identifier.citationYu, G.Y., Shen, Z.X., Liu, L., Sun, W.X. (2001-12). Raman scattering study of a GaAsN epitaxial layer. Materials Science in Semiconductor Processing 4 (6) : 581-584. ScholarBank@NUS Repository. https://doi.org/10.1016/S1369-8001(02)00022-7
dc.identifier.issn13698001
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/98864
dc.description.abstractRaman scattering study of a dilute GaAsN epitaxy layer was carried out at variable temperature and pressure. The localization due to the presence of the N atoms is responsible for the small correlation length in the GaAsN alloy, which is also evident from the broadening and asymmetry of the LO mode of the GaAs-like Raman band. The temperature dependence of the correlation length was analyzed. Nitrogen-induced localization also has a strong influence on the pressure dependence of the Born's effective dynamic charge e*. © 2002 Elsevier Science Ltd. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/S1369-8001(02)00022-7
dc.sourceScopus
dc.subjectGaAsN
dc.subjectPhonon correlation length
dc.subjectRaman scattering
dc.typeConference Paper
dc.contributor.departmentPHYSICS
dc.description.doi10.1016/S1369-8001(02)00022-7
dc.description.sourcetitleMaterials Science in Semiconductor Processing
dc.description.volume4
dc.description.issue6
dc.description.page581-584
dc.identifier.isiut000175066200022
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

8
checked on Mar 20, 2023

WEB OF SCIENCETM
Citations

8
checked on Mar 13, 2023

Page view(s)

208
checked on Mar 16, 2023

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.