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|Title:||Raman scattering study of a GaAsN epitaxial layer||Authors:||Yu, G.Y.
Phonon correlation length
|Issue Date:||Dec-2001||Citation:||Yu, G.Y., Shen, Z.X., Liu, L., Sun, W.X. (2001-12). Raman scattering study of a GaAsN epitaxial layer. Materials Science in Semiconductor Processing 4 (6) : 581-584. ScholarBank@NUS Repository. https://doi.org/10.1016/S1369-8001(02)00022-7||Abstract:||Raman scattering study of a dilute GaAsN epitaxy layer was carried out at variable temperature and pressure. The localization due to the presence of the N atoms is responsible for the small correlation length in the GaAsN alloy, which is also evident from the broadening and asymmetry of the LO mode of the GaAs-like Raman band. The temperature dependence of the correlation length was analyzed. Nitrogen-induced localization also has a strong influence on the pressure dependence of the Born's effective dynamic charge e*. © 2002 Elsevier Science Ltd. All rights reserved.||Source Title:||Materials Science in Semiconductor Processing||URI:||http://scholarbank.nus.edu.sg/handle/10635/98864||ISSN:||13698001||DOI:||10.1016/S1369-8001(02)00022-7|
|Appears in Collections:||Staff Publications|
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