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|Title:||Raman and photoluminescence investigation of ZnxCd1-xSe thin film under high pressure||Authors:||Li, W.S.
|Issue Date:||1998||Citation:||Li, W.S., Shen, Z.X., Shen, D.Z., Fan, X.W. (1998). Raman and photoluminescence investigation of ZnxCd1-xSe thin film under high pressure. Proceedings of SPIE - The International Society for Optical Engineering 3424 : 126-130. ScholarBank@NUS Repository. https://doi.org/10.1117/12.323752||Abstract:||Micro-Raman and photoluminescence (PL) studies of ZnxCd1-xSe (x=0.68) thin film have been carried out under high pressure at room temperature. In the PL spectra, the PL energy gap shift exhibits sublinearity with pressure and a least-square fitting to the experimental data gives a pressure coefficients of α=0.082 eV/GPa and β=-0.0052 eV/GPa2. The second-order pressure coefficient β of the energy gap obtained experimentally is anomalously large and its origin was explained by alloy potential fluctuation with increasing pressure. In the Raman spectra, the first-order pressure coefficient was also calculated by least-square fit. The low energy tail of the longitudinal-optical (LO) phonon was found to develop with pressure for the first time, and the line shape change with pressure is interpreted in terms of a "spatial correlation" (SC) model.||Source Title:||Proceedings of SPIE - The International Society for Optical Engineering||URI:||http://scholarbank.nus.edu.sg/handle/10635/98863||ISSN:||0277786X||DOI:||10.1117/12.323752|
|Appears in Collections:||Staff Publications|
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