Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.apsusc.2005.09.036
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dc.titlePossible transition from space-charge-limited to injection-limited conduction in poly(3-hexylthiophene) thin films
dc.contributor.authorZheng, Y.
dc.contributor.authorKunardi, L.
dc.contributor.authorTroadec, C.
dc.contributor.authorWee, A.T.S.
dc.contributor.authorChandrasekhar, N.
dc.date.accessioned2014-10-16T09:52:03Z
dc.date.available2014-10-16T09:52:03Z
dc.date.issued2006-03-31
dc.identifier.citationZheng, Y., Kunardi, L., Troadec, C., Wee, A.T.S., Chandrasekhar, N. (2006-03-31). Possible transition from space-charge-limited to injection-limited conduction in poly(3-hexylthiophene) thin films. Applied Surface Science 252 (11) : 4023-4025. ScholarBank@NUS Repository. https://doi.org/10.1016/j.apsusc.2005.09.036
dc.identifier.issn01694332
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/98839
dc.description.abstractTwo-terminal thin films of poly(3-hexylthiophene) (P3HT) with a wide electrode separation (150μm) has been studied using current-voltage characteristics at different temperatures. Space-charge-limited conduction (SCLC) with high injection barriers (1.3eV) has been observed at all temperatures in the low electric field regime. A possible transition from SCLC to injection-limited conduction (ILC) is reported. The experimental results have been compared with the disorder-controlled injection model proposed by Arkhipov et al. [V.I. Arkhipov, H. von Seggern, E.V. Emilianova, Appl. Phys. Lett. 83 (2003) 5074; V.I. Arkhipov, E.V. Emilianova, Y.-H. Tak, H. Bässler, J. Appl. Phys. 84 (1998) 848; V.I. Arkhipov, U. Wolf, H. Bässler, Phys. Rev. B 59 (1999) 7514]. © 2005 Elsevier B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.apsusc.2005.09.036
dc.sourceScopus
dc.subjectCharge injection
dc.subjectMetal-organic interface
dc.subjectP3HT thin films
dc.subjectSCLC to ILC transition
dc.typeConference Paper
dc.contributor.departmentPHYSICS
dc.description.doi10.1016/j.apsusc.2005.09.036
dc.description.sourcetitleApplied Surface Science
dc.description.volume252
dc.description.issue11
dc.description.page4023-4025
dc.description.codenASUSE
dc.identifier.isiut000236835200023
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