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Please use this identifier to cite or link to this item: https://doi.org/10.1117/12.567602
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dc.titleNew fabrication technology for photonic crystal waveguides
dc.contributor.authorMehta, S.S.
dc.contributor.authorMurthy, B.R.
dc.contributor.authorHui, Z.
dc.contributor.authorSuryani
dc.contributor.authorJi, W.
dc.contributor.authorIyer, M.K.
dc.contributor.authorMy, D.
dc.date.accessioned2014-10-16T09:51:41Z
dc.date.available2014-10-16T09:51:41Z
dc.date.issued2004
dc.identifier.citationMehta, S.S., Murthy, B.R., Hui, Z., Suryani, Ji, W., Iyer, M.K., My, D. (2004). New fabrication technology for photonic crystal waveguides. Proceedings of SPIE - The International Society for Optical Engineering 5577 (PART 2) : 550-560. ScholarBank@NUS Repository. https://doi.org/10.1117/12.567602
dc.identifier.issn0277786X
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/98808
dc.description.abstractWe have developed a deep ultraviolet (DUV) lithography technique for fabricating super dense silicon based photonic crystals. Binary mask is used to create nano scale patterns of very high density. Based on the simulation, photonic crystals with both square and triangular lattice of air cylinders are designed and fabricated to work in communication frequency range (λ within 1.3 to 1.55μm) on amorphous silicon. In order to pattern circular hole we designed different kind of polygons on the mask and layout pattern was under sized at constant pitch. Bottom anti reflection coating (BARC) recipe was developed to improve circularity of the pattern and reduce interhole spacing.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1117/12.567602
dc.sourceScopus
dc.subjectBARC etch
dc.subjectDiffraction orders
dc.subjectDUV lithography
dc.subjectPhotonic crystals
dc.subjectPolygons
dc.typeConference Paper
dc.contributor.departmentPHYSICS
dc.description.doi10.1117/12.567602
dc.description.sourcetitleProceedings of SPIE - The International Society for Optical Engineering
dc.description.volume5577
dc.description.issuePART 2
dc.description.page550-560
dc.description.codenPSISD
dc.identifier.isiut000226463500063
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