New developments in the applications of proton beam writing

Abstract

This report describes how proton beam writing can be used to produce direct write, high resolution three dimensional structures on the nano and micron scales in semiconductor materials such as p-type (1 0 0) bulk silicon and gallium arsenide. The lattice damage caused by the proton irradiation increases the electrical resistance of the semiconductors resulting in a raised structure of the scanned area after an electrochemical etch. Advances in this field over the past few years and its relevance to future technology mean that it is now a powerful contender for direct write technology for future nodes 45 nm and below. © 2005 Elsevier B.V. All rights reserved.