Please use this identifier to cite or link to this item:
|Title:||Investigation of titanium silicide formation using secondary ion mass spectrometry||Authors:||Wee, Andrew T.S.
Huan, Alfred C.H.
|Issue Date:||1994||Citation:||Wee, Andrew T.S.,Huan, Alfred C.H.,Thian, W.H.,Tan, K.L.,Hogan, Royston (1994). Investigation of titanium silicide formation using secondary ion mass spectrometry. Materials Research Society Symposium - Proceedings 342 : 117-122. ScholarBank@NUS Repository.||Abstract:||Secondary ion mass spectrometry (SIMS) and X-ray photoelectron spectroscopy (XPS) are used to investigate Ti silicide formation mechanisms on a series of Ti on Si thin films annealed in ultrahigh vacuum (UHV) at different temperatures and durations. The competition between oxygen diffusion and the silicide formation reaction (the so-called 'snowplough' effect) is observed directly, as well as a Ti-Si-O layer. The results from these controlled experiments are compared with those from Ti silicide films formed under rapid thermal annealing (RTA) conditions in a production furnace, with and without a TiW barrier layer.||Source Title:||Materials Research Society Symposium - Proceedings||URI:||http://scholarbank.nus.edu.sg/handle/10635/98769||ISSN:||02729172|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jun 27, 2020
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.