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Title: Investigation of titanium silicide formation using secondary ion mass spectrometry
Authors: Wee, Andrew T.S. 
Huan, Alfred C.H. 
Thian, W.H.
Tan, K.L. 
Hogan, Royston
Issue Date: 1994
Citation: Wee, Andrew T.S.,Huan, Alfred C.H.,Thian, W.H.,Tan, K.L.,Hogan, Royston (1994). Investigation of titanium silicide formation using secondary ion mass spectrometry. Materials Research Society Symposium - Proceedings 342 : 117-122. ScholarBank@NUS Repository.
Abstract: Secondary ion mass spectrometry (SIMS) and X-ray photoelectron spectroscopy (XPS) are used to investigate Ti silicide formation mechanisms on a series of Ti on Si thin films annealed in ultrahigh vacuum (UHV) at different temperatures and durations. The competition between oxygen diffusion and the silicide formation reaction (the so-called 'snowplough' effect) is observed directly, as well as a Ti-Si-O layer. The results from these controlled experiments are compared with those from Ti silicide films formed under rapid thermal annealing (RTA) conditions in a production furnace, with and without a TiW barrier layer.
Source Title: Materials Research Society Symposium - Proceedings
ISSN: 02729172
Appears in Collections:Staff Publications

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