Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2005.09.046
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dc.titleGrowth of high quality Er-Ge films on Ge(001) substrates by suppressing oxygen contamination during germanidation annealing
dc.contributor.authorLiew, S.L.
dc.contributor.authorBalakrisnan, B.
dc.contributor.authorChow, S.Y.
dc.contributor.authorLai, M.Y.
dc.contributor.authorWang, W.D.
dc.contributor.authorLee, K.Y.
dc.contributor.authorHo, C.S.
dc.contributor.authorOsipowicz, T.
dc.contributor.authorChi, D.Z.
dc.date.accessioned2014-10-16T09:50:46Z
dc.date.available2014-10-16T09:50:46Z
dc.date.issued2006-05-10
dc.identifier.citationLiew, S.L., Balakrisnan, B., Chow, S.Y., Lai, M.Y., Wang, W.D., Lee, K.Y., Ho, C.S., Osipowicz, T., Chi, D.Z. (2006-05-10). Growth of high quality Er-Ge films on Ge(001) substrates by suppressing oxygen contamination during germanidation annealing. Thin Solid Films 504 (1-2) : 81-85. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2005.09.046
dc.identifier.issn00406090
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/98732
dc.description.abstractSolid-state reactions between Er and Ge (001) under different processing conditions were investigated. Under normal rapid thermal processing (RTP) in high-purity N2 ambience, the Er-Ge film formation was 'contaminated' with Er2O3 even at low temperature annealing. Ti capping of Er films before RTP delayed Er2O3 formation with the Ti cap acting as a sacrificial layer for the Er underneath. Vacuum annealing of Er films significantly reduced Er2O3 formation even after higher temperature annealing. High quality Er-Ge films can thus be formed through solid-state reaction of Er and Ge if oxygen contamination from annealing ambient during RTP is controlled. The Er-Ge phase had low sheet resistance values averaging 3 to 4 Ω/sq. ErGe1.8 was formed from the solid-state reaction between Er and Ge(001) in vacuum. © 2005 Elsevier B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.tsf.2005.09.046
dc.sourceScopus
dc.subjectErbium
dc.subjectGermanium
dc.subjectRapid thermal processing
dc.typeConference Paper
dc.contributor.departmentPHYSICS
dc.description.doi10.1016/j.tsf.2005.09.046
dc.description.sourcetitleThin Solid Films
dc.description.volume504
dc.description.issue1-2
dc.description.page81-85
dc.description.codenTHSFA
dc.identifier.isiut000236486200020
Appears in Collections:Staff Publications

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