Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2005.09.046
DC FieldValue
dc.titleGrowth of high quality Er-Ge films on Ge(001) substrates by suppressing oxygen contamination during germanidation annealing
dc.contributor.authorLiew, S.L.
dc.contributor.authorBalakrisnan, B.
dc.contributor.authorChow, S.Y.
dc.contributor.authorLai, M.Y.
dc.contributor.authorWang, W.D.
dc.contributor.authorLee, K.Y.
dc.contributor.authorHo, C.S.
dc.contributor.authorOsipowicz, T.
dc.contributor.authorChi, D.Z.
dc.date.accessioned2014-10-16T09:50:46Z
dc.date.available2014-10-16T09:50:46Z
dc.date.issued2006-05-10
dc.identifier.citationLiew, S.L., Balakrisnan, B., Chow, S.Y., Lai, M.Y., Wang, W.D., Lee, K.Y., Ho, C.S., Osipowicz, T., Chi, D.Z. (2006-05-10). Growth of high quality Er-Ge films on Ge(001) substrates by suppressing oxygen contamination during germanidation annealing. Thin Solid Films 504 (1-2) : 81-85. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2005.09.046
dc.identifier.issn00406090
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/98732
dc.description.abstractSolid-state reactions between Er and Ge (001) under different processing conditions were investigated. Under normal rapid thermal processing (RTP) in high-purity N2 ambience, the Er-Ge film formation was 'contaminated' with Er2O3 even at low temperature annealing. Ti capping of Er films before RTP delayed Er2O3 formation with the Ti cap acting as a sacrificial layer for the Er underneath. Vacuum annealing of Er films significantly reduced Er2O3 formation even after higher temperature annealing. High quality Er-Ge films can thus be formed through solid-state reaction of Er and Ge if oxygen contamination from annealing ambient during RTP is controlled. The Er-Ge phase had low sheet resistance values averaging 3 to 4 Ω/sq. ErGe1.8 was formed from the solid-state reaction between Er and Ge(001) in vacuum. © 2005 Elsevier B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.tsf.2005.09.046
dc.sourceScopus
dc.subjectErbium
dc.subjectGermanium
dc.subjectRapid thermal processing
dc.typeConference Paper
dc.contributor.departmentPHYSICS
dc.description.doi10.1016/j.tsf.2005.09.046
dc.description.sourcetitleThin Solid Films
dc.description.volume504
dc.description.issue1-2
dc.description.page81-85
dc.description.codenTHSFA
dc.identifier.isiut000236486200020
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

9
checked on Sep 18, 2019

WEB OF SCIENCETM
Citations

9
checked on Sep 18, 2019

Page view(s)

57
checked on Sep 7, 2019

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.