Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4795542
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dc.titleField-effect control of tunneling barrier height by exploiting graphene's low density of states
dc.contributor.authorPonomarenko, L.A.
dc.contributor.authorBelle, B.D.
dc.contributor.authorJalil, R.
dc.contributor.authorBritnell, L.
dc.contributor.authorGorbachev, R.V.
dc.contributor.authorGeim, A.K.
dc.contributor.authorNovoselov, K.S.
dc.contributor.authorCastro Neto, A.H.
dc.contributor.authorEaves, L.
dc.contributor.authorKatsnelson, M.I.
dc.date.accessioned2014-10-16T09:50:36Z
dc.date.available2014-10-16T09:50:36Z
dc.date.issued2013-04-07
dc.identifier.citationPonomarenko, L.A., Belle, B.D., Jalil, R., Britnell, L., Gorbachev, R.V., Geim, A.K., Novoselov, K.S., Castro Neto, A.H., Eaves, L., Katsnelson, M.I. (2013-04-07). Field-effect control of tunneling barrier height by exploiting graphene's low density of states. Journal of Applied Physics 113 (13) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4795542
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/98718
dc.description.abstractWe exploit the low density of electronic states of graphene to modulate the tunnel current flowing perpendicular to the atomic layers of a multi-layer graphene-boron nitride device. This is achieved by using the electric field effect to raise the Fermi energy of the graphene emitter layer and thereby reduce the effective barrier height for tunneling electrons. We discuss how the electron charge density in the graphene layers and the properties of the boron nitride tunnel barrier determine the device characteristics under operating conditions and derive expressions for carrier tunneling in these highly anisotropic layered heterostructures. © 2013 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.4795542
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentPHYSICS
dc.description.doi10.1063/1.4795542
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume113
dc.description.issue13
dc.description.page-
dc.description.codenJAPIA
dc.identifier.isiut000317238000069
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