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|Title:||Fabrication of silicon nanowires by ion beam irradiation||Authors:||Song, J.
|Issue Date:||2012||Citation:||Song, J.,Dang, Z.Y.,Azimi, S.,Breese, M.B.H. (2012). Fabrication of silicon nanowires by ion beam irradiation. Materials Research Society Symposium Proceedings 1512 : 26-32. ScholarBank@NUS Repository. https://doi.org/10.1557/opl.2013.423||Abstract:||Silicon nanowires are becoming more important because of increasing requirements of the small scale and dense integration of devices. We report a top-down fabrication method for silicon nanowires using high-energy ion beam irradiation of bulk p-type silicon followed by electrochemical etching. Silicon nanowires with a diameter of ∼50nm have been fabricated and densely patterned nanowire arrays fabricated in different resistivity silicon wafers. With a suitable support structure, free standing silicon nanowires are also achieved. We investigate results depending on silicon wafer resistivity and location within the irradiated area. © 2013 Materials Research Society.||Source Title:||Materials Research Society Symposium Proceedings||URI:||http://scholarbank.nus.edu.sg/handle/10635/98712||ISBN:||9781632661050||ISSN:||02729172||DOI:||10.1557/opl.2013.423|
|Appears in Collections:||Staff Publications|
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