Please use this identifier to cite or link to this item: https://doi.org/10.1117/12.524314
DC FieldValue
dc.titleFabrication of silicon microstructures using a high energy ion beam
dc.contributor.authorTeo, E.J.
dc.contributor.authorLiu, M.H.
dc.contributor.authorBreese, M.B.H.
dc.contributor.authorTavernier, E.P.
dc.contributor.authorBettiol, A.A.
dc.contributor.authorBlackwood, D.J.
dc.contributor.authorWatt, F.
dc.date.accessioned2014-10-16T09:50:31Z
dc.date.available2014-10-16T09:50:31Z
dc.date.issued2004
dc.identifier.citationTeo, E.J., Liu, M.H., Breese, M.B.H., Tavernier, E.P., Bettiol, A.A., Blackwood, D.J., Watt, F. (2004). Fabrication of silicon microstructures using a high energy ion beam. Proceedings of SPIE - The International Society for Optical Engineering 5347 : 264-270. ScholarBank@NUS Repository. https://doi.org/10.1117/12.524314
dc.identifier.issn0277786X
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/98711
dc.description.abstractWe report an alternative technique which utilizes fast proton or helium ion irradiation prior to electrochemical etching for three-dimensional micro-fabrication in bulk p-type silicon. The ion-induced damage increases the resistivity of the irradiated regions and slows down porous silicon formation. A raised structure of the scanned area is left behind after removal of the un-irradiated regions with potassium hydroxide. The thickness of the removed material depends on the irradiated dose at each region so that multiple level structures can be produced with a single irradiation step. By exposing the silicon to different ion energies, the implanted depth and hence structure height can be precisely varied. We demonstrate the versatility of this three-dimensional patterning process to create multilevel cross structure and free-standing bridges in bulk silicon, as well as sub-micron pillars and high aspect-ratio nano-tips.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1117/12.524314
dc.sourceScopus
dc.subjectElectrochemical etching
dc.subjectIon accelerator
dc.subjectPorous silicon
dc.subjectProton beam writing
dc.subjectSilicon micromachining
dc.typeConference Paper
dc.contributor.departmentMATERIALS SCIENCE
dc.contributor.departmentPHYSICS
dc.description.doi10.1117/12.524314
dc.description.sourcetitleProceedings of SPIE - The International Society for Optical Engineering
dc.description.volume5347
dc.description.page264-270
dc.description.codenPSISD
dc.identifier.isiut000189447300030
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

13
checked on Sep 11, 2019

WEB OF SCIENCETM
Citations

12
checked on Sep 3, 2019

Page view(s)

28
checked on Sep 7, 2019

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.