Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2005.09.156
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dc.titleEnhancement of minority-carrier lifetime by an advanced high temperature annealing method
dc.contributor.authorPan, H.
dc.contributor.authorTong, L.
dc.contributor.authorFeng, Y.
dc.contributor.authorLin, J.
dc.date.accessioned2014-10-16T09:50:21Z
dc.date.available2014-10-16T09:50:21Z
dc.date.issued2006-05-10
dc.identifier.citationPan, H., Tong, L., Feng, Y., Lin, J. (2006-05-10). Enhancement of minority-carrier lifetime by an advanced high temperature annealing method. Thin Solid Films 504 (1-2) : 129-131. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2005.09.156
dc.identifier.issn00406090
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/98699
dc.description.abstractAn advanced annealing method was proposed to enhance the lifetime of minority carriers by obtaining larger defect-free zone and keeping an amount of oxygen precipitates. We investigated the influence of annealing process on the defect-free zone and oxygen precipitates. In our experiments, the thickness of defect-free zone reached up to 100 μm. And an amount of oxygen precipitates, which play a great role on impurity gathering, were kept at the same time. It was found that the lifetime of minority-carrier was proportional to the thickness of defect-free zone. The lifetime of minority carriers was enhanced by reducing the grown-in defects in the defect-free zone. © 2005 Elsevier B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.tsf.2005.09.156
dc.sourceScopus
dc.subjectAdvanced annealing
dc.subjectDefect-free zone
dc.subjectLifetime of minority-carrier
dc.subjectOxygen precipitates
dc.typeConference Paper
dc.contributor.departmentPHYSICS
dc.description.doi10.1016/j.tsf.2005.09.156
dc.description.sourcetitleThin Solid Films
dc.description.volume504
dc.description.issue1-2
dc.description.page129-131
dc.description.codenTHSFA
dc.identifier.isiut000236486200031
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