Please use this identifier to cite or link to this item:
|Title:||Electronic structure of GaAs1-xNx alloys||Authors:||Tzu-Lin Lim, A.
|Issue Date:||Dec-2001||Citation:||Tzu-Lin Lim, A.,Feng, Y.P. (2001-12). Electronic structure of GaAs1-xNx alloys. Materials Science in Semiconductor Processing 4 (6) : 577-580. ScholarBank@NUS Repository. https://doi.org/10.1016/S1369-8001(02)00021-5||Abstract:||We have performed first-principles total-energy calculations based on pseudopotential and plane-wave method on ordered GaAs1-xNx alloys. We have found that the alloy is metallic at x≈0.25, has an indirect gap at 0.10||Source Title:||Materials Science in Semiconductor Processing||URI:||http://scholarbank.nus.edu.sg/handle/10635/98695||ISSN:||13698001||DOI:||10.1016/S1369-8001(02)00021-5|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 14, 2020
checked on Feb 16, 2020
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.