Please use this identifier to cite or link to this item:
|dc.title||Effects of focused MeV ion beam irradiation on the roughness of electrochemically micromachined silicon surfaces|
|dc.identifier.citation||Ow, Y.S., Azimi, S., Breese, M.B.H., Teo, E.J., Mangaiyarkarasi, D. (2010-05). Effects of focused MeV ion beam irradiation on the roughness of electrochemically micromachined silicon surfaces. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 28 (3) : 500-505. ScholarBank@NUS Repository. https://doi.org/10.1116/1.3406130|
|dc.description.abstract||The authors compare the effects of focused and broad MeV ion beam irradiation on the surface roughness of silicon wafers after subsequent electrochemical anodization. With a focused beam, the roughness increases rapidly for low fluences and then slowly decreases for higher fluences, in contrast to broad beam irradiation where the roughness slowly increases with fluence. This effect is important as it imposes a limitation on the ability to fabricate smooth surfaces using focused ion beam irradiation. For a given fluence, small variations in the resistivity of an irradiated area may arise due to fluctuations of the focused beam current during irradiation. These small variations in resistivity then give rise to an increased roughness during the electrochemical etching. The roughness may be reduced by increasing the scan speed, which alters the way in which the fluctuations in fluence are averaged out over the irradiated surface. © 2010 American Vacuum Society.|
|dc.description.sourcetitle||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Appears in Collections:||Staff Publications|
Show simple item record
Files in This Item:
There are no files associated with this item.
checked on Jan 15, 2020
WEB OF SCIENCETM
checked on Jan 7, 2020
checked on Dec 28, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.