Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0026-2692(03)00238-6
DC FieldValue
dc.titleEffect of parylene layer on the performance of OLED
dc.contributor.authorKe, L.
dc.contributor.authorKumar, R.S.
dc.contributor.authorZhang, K.
dc.contributor.authorChua, S.-J.
dc.contributor.authorWee, A.T.S.
dc.date.accessioned2014-10-16T09:50:09Z
dc.date.available2014-10-16T09:50:09Z
dc.date.issued2004-04
dc.identifier.citationKe, L., Kumar, R.S., Zhang, K., Chua, S.-J., Wee, A.T.S. (2004-04). Effect of parylene layer on the performance of OLED. Microelectronics Journal 35 (4) : 325-328. ScholarBank@NUS Repository. https://doi.org/10.1016/S0026-2692(03)00238-6
dc.identifier.issn00262692
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/98682
dc.description.abstractAn organic light-emitting device structure with a thin parylene layer deposited by low-temperature chemical vapour deposition at the anode-organic interface was fabricated. Such a structure gives higher luminescence efficiency when operated at the same current density compared to one without the parylene layer. In addition, the devices with a thin parylene layer also show a smaller number and smaller size dark non-emissive areas, slower growth rate of the dark areas and a longer device lifetime. The modified surface of the indium tin oxide (ITO) shows an increased work function compared to that of the ITO surface alone and a reduced surface roughness, which contributes to the device performance improvement. The parylene layer is a conformal coating on the ITO surface, which could significantly stabilise the interface leading to a more uniform current density. It also provides a good barrier for blocking oxygen and moisture diffusion and hence reducing dark spot occurrence. © 2003 Published by Elsevier Ltd.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/S0026-2692(03)00238-6
dc.sourceScopus
dc.subjectHole transporting layer
dc.subjectIndium tin oxide
dc.subjectParylene layer
dc.typeConference Paper
dc.contributor.departmentPHYSICS
dc.description.doi10.1016/S0026-2692(03)00238-6
dc.description.sourcetitleMicroelectronics Journal
dc.description.volume35
dc.description.issue4
dc.description.page325-328
dc.description.codenMICEB
dc.identifier.isiut000220391200003
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