Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.nimb.2005.01.098
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dc.titleDetermination of local lattice tilt in Si1-xGex virtual substrate using high resolution channeling contrast microscopy
dc.contributor.authorSeng, H.L.
dc.contributor.authorOsipowicz, T.
dc.contributor.authorZhang, J.
dc.contributor.authorTok, E.S.
dc.contributor.authorWatt, F.
dc.date.accessioned2014-10-16T09:49:57Z
dc.date.available2014-10-16T09:49:57Z
dc.date.issued2005-04
dc.identifier.citationSeng, H.L., Osipowicz, T., Zhang, J., Tok, E.S., Watt, F. (2005-04). Determination of local lattice tilt in Si1-xGex virtual substrate using high resolution channeling contrast microscopy. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 231 (1-4) : 446-451. ScholarBank@NUS Repository. https://doi.org/10.1016/j.nimb.2005.01.098
dc.identifier.issn0168583X
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/98665
dc.description.abstractStrain relaxed Si1-xGex virtual substrates with low densities of threading dislocations are grown by molecular beam epitaxy or chemical vapour deposition using the compositional grading technique. They have a wide range of applications in microelectronic and optoelectronic devices. A common surface feature of such virtual substrates is a cross-hatch pattern that is oriented along orthogonal [1 1 0] directions and is believed to be associated with strain relaxation processes. Such cross-hatch roughening affects carrier mobility and the quality of the subsequent layers grown on the virtual substrates. Accurate measurements of the material properties of these virtual substrates are essential for the optimization of the growth processes and conditions. Channeling contrast microscopy, which uses a focused ion beam to obtain laterally resolved channeling yield information, is an ideal technique to determine the microstructural characteristics of such samples. Here, we determine the extent of the local lattice tilt from channeling contrast measurements and investigate the influence of the growth temperature and grading rate on surface morphology, crystalline quality and the extent of the lattice tilts in the constant composition layer. © 2005 Elsevier B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.nimb.2005.01.098
dc.sourceScopus
dc.subjectChanneling contrast microscopy
dc.subjectSiGe
dc.subjectVirtual substrate
dc.typeConference Paper
dc.contributor.departmentPHYSICS
dc.contributor.departmentMATERIALS SCIENCE
dc.description.doi10.1016/j.nimb.2005.01.098
dc.description.sourcetitleNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
dc.description.volume231
dc.description.issue1-4
dc.description.page446-451
dc.description.codenNIMBE
dc.identifier.isiut000229752400075
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