Please use this identifier to cite or link to this item: https://doi.org/10.1117/12.280533
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dc.titleDeep ion beam lithography for micromachining applications
dc.contributor.authorSpringham, S.V.
dc.contributor.authorOsipowicz, T.
dc.contributor.authorSanchez, J.L.
dc.contributor.authorLee, S.
dc.contributor.authorWatt, F.
dc.date.accessioned2014-10-16T09:49:56Z
dc.date.available2014-10-16T09:49:56Z
dc.date.issued1997
dc.identifier.citationSpringham, S.V., Osipowicz, T., Sanchez, J.L., Lee, S., Watt, F. (1997). Deep ion beam lithography for micromachining applications. Proceedings of SPIE - The International Society for Optical Engineering 3183 : 128-137. ScholarBank@NUS Repository. https://doi.org/10.1117/12.280533
dc.identifier.issn0277786X
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/98663
dc.description.abstractLIGA and its defining process deep x-ray lithography, is an important method for machining high-aspect ratio microstractures, and a diverse range of applications are presently being investigated. One limitation of the technique is associated with the restriction on the three dimensional shape of the machined structures to essentially prismatic geometry. Further technical problems concerning the fabrication of a suitable mask for deep x-ray lithography are associated with the limited thickness of resist which can be patterned using electron beam lithography, and the undesirable exposure of resist by secondary radiations in an intervening x-ray lithography step which is used to produce a thicker mask. A deep lithography process using a focused beam of high energy light ions has the potential to overcome many of the geometrical restrictions inherent in deep x-ray lithography. An alternative use of deep ion beam lithography (DIBL) is to pattern a thick resist layer for the production of masks for deep x-ray lithography. This paper reports progress on the development of a system for deep ion beam lithography using a scanned 2.0 MeV proton beam of approximately 1 micron diameter. The results of computer simulations of the capabilities of deep ion beam lithography for the fabrication of thick DXL masks is presented.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1117/12.280533
dc.sourceScopus
dc.subjectDIBL
dc.subjectHigh aspect-ratio
dc.subjectLIGA
dc.subjectMask fabrication
dc.subjectMEMS
dc.subjectMicromachining
dc.typeConference Paper
dc.contributor.departmentPHYSICS
dc.description.doi10.1117/12.280533
dc.description.sourcetitleProceedings of SPIE - The International Society for Optical Engineering
dc.description.volume3183
dc.description.page128-137
dc.description.codenPSISD
dc.identifier.isiutA1997BJ57L00013
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