Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.nimb.2005.01.099
DC FieldValue
dc.titleCharacterisation of 60° misfit dislocations in SiGe alloy using nuclear microscopy
dc.contributor.authorHuang, L.
dc.contributor.authorBreese, M.B.H.
dc.contributor.authorTeo, E.J.
dc.date.accessioned2014-10-16T09:49:45Z
dc.date.available2014-10-16T09:49:45Z
dc.date.issued2005-04
dc.identifier.citationHuang, L., Breese, M.B.H., Teo, E.J. (2005-04). Characterisation of 60° misfit dislocations in SiGe alloy using nuclear microscopy. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 231 (1-4) : 452-456. ScholarBank@NUS Repository. https://doi.org/10.1016/j.nimb.2005.01.099
dc.identifier.issn0168583X
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/98649
dc.description.abstractThis paper uses the transmission ion channeling technique on the NUS Singletron accelerator to map misfit dislocations at the interface of a SiGe layer epitaxially grown on a (0 0 1) silicon substrate. A bunch of five 60° dislocations and a single dislocation have been studied using a focused 2 MeV proton beam with a spatial resolution of 60 nm and good image statistics. The bent (1 1 0) planes due to 60° dislocations cause the image contrast to change asymmetrically while tilting the sample close to the channeling direction. © 2005 Elsevier B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.nimb.2005.01.099
dc.sourceScopus
dc.subjectMisfit dislocation
dc.subjectTransmission ion channeling
dc.typeConference Paper
dc.contributor.departmentPHYSICS
dc.contributor.departmentMATERIALS SCIENCE
dc.description.doi10.1016/j.nimb.2005.01.099
dc.description.sourcetitleNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
dc.description.volume231
dc.description.issue1-4
dc.description.page452-456
dc.description.codenNIMBE
dc.identifier.isiut000229752400076
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