Please use this identifier to cite or link to this item:
|Title:||Characterisation of 60° misfit dislocations in SiGe alloy using nuclear microscopy||Authors:||Huang, L.
Transmission ion channeling
|Issue Date:||Apr-2005||Citation:||Huang, L., Breese, M.B.H., Teo, E.J. (2005-04). Characterisation of 60° misfit dislocations in SiGe alloy using nuclear microscopy. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 231 (1-4) : 452-456. ScholarBank@NUS Repository. https://doi.org/10.1016/j.nimb.2005.01.099||Abstract:||This paper uses the transmission ion channeling technique on the NUS Singletron accelerator to map misfit dislocations at the interface of a SiGe layer epitaxially grown on a (0 0 1) silicon substrate. A bunch of five 60° dislocations and a single dislocation have been studied using a focused 2 MeV proton beam with a spatial resolution of 60 nm and good image statistics. The bent (1 1 0) planes due to 60° dislocations cause the image contrast to change asymmetrically while tilting the sample close to the channeling direction. © 2005 Elsevier B.V. All rights reserved.||Source Title:||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms||URI:||http://scholarbank.nus.edu.sg/handle/10635/98649||ISSN:||0168583X||DOI:||10.1016/j.nimb.2005.01.099|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on May 12, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.