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https://doi.org/10.1088/0022-3727/29/12/010
DC Field | Value | |
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dc.title | XPS studies on nitridation of InP(100) surface by N+ 2 ion beam bombardment | |
dc.contributor.author | Pan, J.S. | |
dc.contributor.author | Wee, A.T.S. | |
dc.contributor.author | Huan, C.H.A. | |
dc.contributor.author | Tan, H.S. | |
dc.contributor.author | Tan, K.L. | |
dc.date.accessioned | 2014-10-16T09:49:01Z | |
dc.date.available | 2014-10-16T09:49:01Z | |
dc.date.issued | 1996-12-14 | |
dc.identifier.citation | Pan, J.S., Wee, A.T.S., Huan, C.H.A., Tan, H.S., Tan, K.L. (1996-12-14). XPS studies on nitridation of InP(100) surface by N+ 2 ion beam bombardment. Journal of Physics D: Applied Physics 29 (12) : 2997-3002. ScholarBank@NUS Repository. https://doi.org/10.1088/0022-3727/29/12/010 | |
dc.identifier.issn | 00223727 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/98602 | |
dc.description.abstract | Ion beam nitridation (IBN) of InP at room temperature was studied as a function of both N+ 2 ion incident angle and energy. The InP surfaces were exposed to N+ 2 ion beam in an ultrahigh vacuum environment and the resulting surfaces were characterized in situ by small spot size x-ray photoelectron spectroscopy (XPS) for accurate determination of the surface composition and chemical state. Thin InN reaction layers were formed at all N+ 2 ion incident angles and ion energies whereas the formation of P-N bonds was not observed. However, the degree of nitridation of In decreases with increasing incident angle and ion energy, closely following the reduced incorporation of N at higher angles and ion energies. The variation in nitridation is smaller with ion energy in the 2-10 keV range than with ion incident angle. The observed angular and energy dependence of the N incorporation can be explained in terms of sputtering yields, indicating that the growth kinetics can be described as a dynamic process comprising the accumulation of N and sputter removal of the surface layer. | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | PHYSICS | |
dc.description.doi | 10.1088/0022-3727/29/12/010 | |
dc.description.sourcetitle | Journal of Physics D: Applied Physics | |
dc.description.volume | 29 | |
dc.description.issue | 12 | |
dc.description.page | 2997-3002 | |
dc.description.coden | JPAPB | |
dc.identifier.isiut | A1996WA20600010 | |
Appears in Collections: | Staff Publications |
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