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Title: XPS studies on nitridation of InP(100) surface by N+ 2 ion beam bombardment
Authors: Pan, J.S. 
Wee, A.T.S. 
Huan, C.H.A. 
Tan, H.S. 
Tan, K.L. 
Issue Date: 14-Dec-1996
Citation: Pan, J.S., Wee, A.T.S., Huan, C.H.A., Tan, H.S., Tan, K.L. (1996-12-14). XPS studies on nitridation of InP(100) surface by N+ 2 ion beam bombardment. Journal of Physics D: Applied Physics 29 (12) : 2997-3002. ScholarBank@NUS Repository.
Abstract: Ion beam nitridation (IBN) of InP at room temperature was studied as a function of both N+ 2 ion incident angle and energy. The InP surfaces were exposed to N+ 2 ion beam in an ultrahigh vacuum environment and the resulting surfaces were characterized in situ by small spot size x-ray photoelectron spectroscopy (XPS) for accurate determination of the surface composition and chemical state. Thin InN reaction layers were formed at all N+ 2 ion incident angles and ion energies whereas the formation of P-N bonds was not observed. However, the degree of nitridation of In decreases with increasing incident angle and ion energy, closely following the reduced incorporation of N at higher angles and ion energies. The variation in nitridation is smaller with ion energy in the 2-10 keV range than with ion incident angle. The observed angular and energy dependence of the N incorporation can be explained in terms of sputtering yields, indicating that the growth kinetics can be described as a dynamic process comprising the accumulation of N and sputter removal of the surface layer.
Source Title: Journal of Physics D: Applied Physics
ISSN: 00223727
DOI: 10.1088/0022-3727/29/12/010
Appears in Collections:Staff Publications

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