Please use this identifier to cite or link to this item: https://doi.org/10.1021/nn800459e
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dc.titleUniaxial strain on graphene: Raman spectroscopy study and band-gap opening
dc.contributor.authorNi, Z.H.
dc.contributor.authorYu, T.
dc.contributor.authorLu, Y.H.
dc.contributor.authorWang, Y.Y.
dc.contributor.authorFeng, Y.P.
dc.contributor.authorShen, Z.X.
dc.date.accessioned2014-10-16T09:48:01Z
dc.date.available2014-10-16T09:48:01Z
dc.date.issued2008-11
dc.identifier.citationNi, Z.H., Yu, T., Lu, Y.H., Wang, Y.Y., Feng, Y.P., Shen, Z.X. (2008-11). Uniaxial strain on graphene: Raman spectroscopy study and band-gap opening. ACS Nano 2 (11) : 2301-2305. ScholarBank@NUS Repository. https://doi.org/10.1021/nn800459e
dc.identifier.issn19360851
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/98515
dc.description.abstractGraphene was deposited on a transparent and flexible substrate, and tensile strain up to ∼0.8% was loaded by stretching the substrate in one direction. Raman spectra of strained graphene show significant red shifts of 2D and G band (- 27.8 and - 14.2 cm -1 per 1% strain, respectively) because of the elongation of the carbon-carbon bonds. This indicates that uniaxial strain has been successfully applied on graphene. We also proposed that, by applying uniaxial strain on graphene, tunable band gap at K point can be realized. First-principle calculations predicted a band-gap opening of ∼300 meV for graphene under 1% uniaxial tensile strain. The strained graphene provides an alternative way to experimentally tune the band gap of graphene, which would be more efficient and more controllable than other methods that are used to open the band gap in graphene. Moreover, our results suggest that the flexible substrate is ready for such a strain process, and Raman spectroscopy can be used as an ultrasensitive method to determine the strain. © 2008 American Chemical Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1021/nn800459e
dc.sourceScopus
dc.subjectBand gap
dc.subjectFlexible substrate
dc.subjectGraphene
dc.subjectRaman
dc.subjectStrain
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1021/nn800459e
dc.description.sourcetitleACS Nano
dc.description.volume2
dc.description.issue11
dc.description.page2301-2305
dc.identifier.isiut000261199400016
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