Please use this identifier to cite or link to this item: https://doi.org/10.1021/jp305231j
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dc.titleUltrasensitive phototransistor based on K-enriched MoO 3 single nanowires
dc.contributor.authorLu, J.
dc.contributor.authorSun, C.
dc.contributor.authorZheng, M.
dc.contributor.authorWang, Y.
dc.contributor.authorNripan, M.
dc.contributor.authorVan Kan, J.A.
dc.contributor.authorMhaisalkar, S.G.
dc.contributor.authorSow, C.H.
dc.date.accessioned2014-10-16T09:47:52Z
dc.date.available2014-10-16T09:47:52Z
dc.date.issued2012-10-18
dc.identifier.citationLu, J., Sun, C., Zheng, M., Wang, Y., Nripan, M., Van Kan, J.A., Mhaisalkar, S.G., Sow, C.H. (2012-10-18). Ultrasensitive phototransistor based on K-enriched MoO 3 single nanowires. Journal of Physical Chemistry C 116 (41) : 22015-22020. ScholarBank@NUS Repository. https://doi.org/10.1021/jp305231j
dc.identifier.issn19327447
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/98506
dc.description.abstractAn ultrasensitive phototransistor was fabricated based on K-intercalated MoO 3 single nanowire. Devices with ultrafast photoresponse rate, high responsivity, and broad spectral response range were demonstrated. Detailed analysis of the charge transport in the device revealed the coexistence of both thermal-activation and photoactivation mechanisms. The promising results are expected to promote the potential of this material in nano/micro-scaled photoelectronic applications. © 2012 American Chemical Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1021/jp305231j
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1021/jp305231j
dc.description.sourcetitleJournal of Physical Chemistry C
dc.description.volume116
dc.description.issue41
dc.description.page22015-22020
dc.identifier.isiut000309902100046
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