Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.apsusc.2008.05.030
DC FieldValue
dc.titleUltralow-energy SIMS for shallow semiconductor depth profiling
dc.contributor.authorChanbasha, A.R.
dc.contributor.authorWee, A.T.S.
dc.date.accessioned2014-10-16T09:47:52Z
dc.date.available2014-10-16T09:47:52Z
dc.date.issued2008-12-15
dc.identifier.citationChanbasha, A.R., Wee, A.T.S. (2008-12-15). Ultralow-energy SIMS for shallow semiconductor depth profiling. Applied Surface Science 255 (4) : 1307-1310. ScholarBank@NUS Repository. https://doi.org/10.1016/j.apsusc.2008.05.030
dc.identifier.issn01694332
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/98505
dc.description.abstractWe present a comprehensive secondary ion mass spectrometry (SIMS) study performed at ultralow energies using both oxygen and cesium primary ions, in positive and negative SIMS for silicon depth profiling, respectively. Variations in surface transient widths and depth resolution are reported as a function of primary ion energy (250 eV-1 keV) over a wide range of incidence angles (0-70°). The instrument used is the Atomika 4500 SIMS depth profiler and the sample was Si with 10 delta-layers of Si0.7Ge0.3. Optimum profiling conditions are found that are useful for silicon ultrashallow profiling. © 2008 Elsevier B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.apsusc.2008.05.030
dc.sourceScopus
dc.subjectCesium
dc.subjectDepth profiling
dc.subjectOxygen
dc.subjectSilicon
dc.subjectSIMS
dc.subjectUltralow-energy
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1016/j.apsusc.2008.05.030
dc.description.sourcetitleApplied Surface Science
dc.description.volume255
dc.description.issue4
dc.description.page1307-1310
dc.description.codenASUSE
dc.identifier.isiut000267217500024
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