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https://doi.org/10.1088/1464-4258/11/2/024004
Title: | Two-photon-enhanced three-photon absorption in transition-metal-doped semiconductor quantum dots | Authors: | Feng, X.B. Xing, G.C. Ji, W. |
Keywords: | Defect state Three-photon absorption Transition-metal-doped semiconductor quantum dots (d-QDs) Two-photon absorption |
Issue Date: | 2009 | Citation: | Feng, X.B., Xing, G.C., Ji, W. (2009). Two-photon-enhanced three-photon absorption in transition-metal-doped semiconductor quantum dots. Journal of Optics A: Pure and Applied Optics 11 (2) : -. ScholarBank@NUS Repository. https://doi.org/10.1088/1464-4258/11/2/024004 | Abstract: | We report the observation of two-photon-enhanced three-photon absorption (3PA) in transition-metal-doped semiconductor quantum dots (d-QDs) in the near-infrared spectral region. Due to the degeneracy between two-photon transitions to the states of metal ions inside the bandgap and three-photon transitions to the excitonic state, the 3PA cross-section is greatly enhanced in comparison with the predictions by the 3PA theory derived under the four-band approximation. Together with the enhancement in their photoluminescence, such an enhancement mechanism is highly desirable in the design and optimization of fluorescent d-QDs for potential applications based on three-photon-excited fluorescence. © 2009 IOP Publishing Ltd. | Source Title: | Journal of Optics A: Pure and Applied Optics | URI: | http://scholarbank.nus.edu.sg/handle/10635/98486 | ISSN: | 14644258 | DOI: | 10.1088/1464-4258/11/2/024004 |
Appears in Collections: | Staff Publications |
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