Please use this identifier to cite or link to this item:
|Title:||Trends in bonding configuration at SiC/III-V semiconductor interfaces||Authors:||Zheng, J.-C.
|Issue Date:||10-Sep-2001||Citation:||Zheng, J.-C., Wang, H.-Q., Wee, A.T.S., Huan, C.H.A. (2001-09-10). Trends in bonding configuration at SiC/III-V semiconductor interfaces. Applied Physics Letters 79 (11) : 1643-1645. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1402162||Abstract:||The structural and electronic properties of interfaces between β-SiC and III-V semiconductors are studied by first-principles calculations. Favorable bonding configurations are found to form between Si-V and C-III (model A) for BN, AlN, AlP, AlAs, GaN, GaP, GaAs, InN, InP, InAs, and InSb, and Si-III and C-V (model B) for BP, BAs, BSb, AlSb, and GaSb. The relationship between the formation energy difference and lattice constant difference, as well as the charge distribution, for these two models is found. The origin of bonding configurations can be explained in terms of the ionicity of III-V semiconductors, electrostatic effect, charge distribution, and band-structure component. © 2001 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/98457||ISSN:||00036951||DOI:||10.1063/1.1402162|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Oct 13, 2019
WEB OF SCIENCETM
checked on Oct 4, 2019
checked on Oct 12, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.