Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1402162
DC FieldValue
dc.titleTrends in bonding configuration at SiC/III-V semiconductor interfaces
dc.contributor.authorZheng, J.-C.
dc.contributor.authorWang, H.-Q.
dc.contributor.authorWee, A.T.S.
dc.contributor.authorHuan, C.H.A.
dc.date.accessioned2014-10-16T09:47:19Z
dc.date.available2014-10-16T09:47:19Z
dc.date.issued2001-09-10
dc.identifier.citationZheng, J.-C., Wang, H.-Q., Wee, A.T.S., Huan, C.H.A. (2001-09-10). Trends in bonding configuration at SiC/III-V semiconductor interfaces. Applied Physics Letters 79 (11) : 1643-1645. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1402162
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/98457
dc.description.abstractThe structural and electronic properties of interfaces between β-SiC and III-V semiconductors are studied by first-principles calculations. Favorable bonding configurations are found to form between Si-V and C-III (model A) for BN, AlN, AlP, AlAs, GaN, GaP, GaAs, InN, InP, InAs, and InSb, and Si-III and C-V (model B) for BP, BAs, BSb, AlSb, and GaSb. The relationship between the formation energy difference and lattice constant difference, as well as the charge distribution, for these two models is found. The origin of bonding configurations can be explained in terms of the ionicity of III-V semiconductors, electrostatic effect, charge distribution, and band-structure component. © 2001 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1402162
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1063/1.1402162
dc.description.sourcetitleApplied Physics Letters
dc.description.volume79
dc.description.issue11
dc.description.page1643-1645
dc.description.codenAPPLA
dc.identifier.isiut000170800700020
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