Please use this identifier to cite or link to this item: https://doi.org/10.1088/0268-1242/5/7/004
DC FieldValue
dc.titleTransient capacitance measurements of laser radiation-induced defects in silicon
dc.contributor.authorTan, H.S.
dc.contributor.authorNg, S.C.
dc.contributor.authorWoon, H.S.
dc.contributor.authorHultquist, G.
dc.date.accessioned2014-10-16T09:47:02Z
dc.date.available2014-10-16T09:47:02Z
dc.date.issued1990-07
dc.identifier.citationTan, H.S., Ng, S.C., Woon, H.S., Hultquist, G. (1990-07). Transient capacitance measurements of laser radiation-induced defects in silicon. Semiconductor Science and Technology 5 (7) : 657-662. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/5/7/004
dc.identifier.issn02681242
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/98433
dc.description.abstractDeep-level transient spectroscopy (DLTS) measurements were performed on two series of diodes which were prepared by Nd:glass pulsed laser irradiation of As and Sb coated Cz grown p-type Si wafers. A main DLTS signal peak at about 0.62 eV was observed for all the samples over the range of laser irradiation energy densities employed. The defect was found to be a hole trap and was acceptor-like. It was tentatively attributed to some SiOx clusters in the oxygen-rich samples. A broad DLTS signal peak was also observed for one sample which was irradiated with a laser-beam energy density very close to the threshold for surface melting. The band of defect states associated with hole traps were related to the slip locations generated in the sample. The unusual defect concentration profiles obtained in this work are also discussed.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1088/0268-1242/5/7/004
dc.description.sourcetitleSemiconductor Science and Technology
dc.description.volume5
dc.description.issue7
dc.description.page657-662
dc.description.codenSSTEE
dc.identifier.isiutA1990DN38100004
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