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|Title:||Three-photon absorption saturation in ZnO and ZnS crystals||Authors:||Gu, B.
|Issue Date:||2008||Citation:||Gu, B., He, J., Ji, W., Wang, H.-T. (2008). Three-photon absorption saturation in ZnO and ZnS crystals. Journal of Applied Physics 103 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2903576||Abstract:||We reported the observation of the saturation of interband three-photon absorption (3PA) in wide-gap semiconductors under intense femtosecond laser excitation. Theoretically, we developed a 3PA saturation model that is in agreement with the Z-scan experimental results. The characteristic saturation intensities were determined to be 44 and 210 GW cm2 for ZnO and ZnS crystals, respectively. The 3PA saturation model is also consistent with the ultrafast dynamics of 3PA-generated charge carriers in ZnO and ZnS crystals, obtained from the femtosecond transient absorption measurements. © 2008 American Institute of Physics.||Source Title:||Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/98403||ISSN:||00218979||DOI:||10.1063/1.2903576|
|Appears in Collections:||Staff Publications|
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