Please use this identifier to cite or link to this item:
Title: Three-photon absorption saturation in ZnO and ZnS crystals
Authors: Gu, B. 
He, J. 
Ji, W. 
Wang, H.-T.
Issue Date: 2008
Citation: Gu, B., He, J., Ji, W., Wang, H.-T. (2008). Three-photon absorption saturation in ZnO and ZnS crystals. Journal of Applied Physics 103 (7) : -. ScholarBank@NUS Repository.
Abstract: We reported the observation of the saturation of interband three-photon absorption (3PA) in wide-gap semiconductors under intense femtosecond laser excitation. Theoretically, we developed a 3PA saturation model that is in agreement with the Z-scan experimental results. The characteristic saturation intensities were determined to be 44 and 210 GW cm2 for ZnO and ZnS crystals, respectively. The 3PA saturation model is also consistent with the ultrafast dynamics of 3PA-generated charge carriers in ZnO and ZnS crystals, obtained from the femtosecond transient absorption measurements. © 2008 American Institute of Physics.
Source Title: Journal of Applied Physics
ISSN: 00218979
DOI: 10.1063/1.2903576
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.