Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3143616
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dc.titleThermoelectric performance of silicon nanowires
dc.contributor.authorZhang, G.
dc.contributor.authorZhang, Q.
dc.contributor.authorBui, C.-T.
dc.contributor.authorLo, G.-Q.
dc.contributor.authorLi, B.
dc.date.accessioned2014-10-16T09:46:30Z
dc.date.available2014-10-16T09:46:30Z
dc.date.issued2009
dc.identifier.citationZhang, G., Zhang, Q., Bui, C.-T., Lo, G.-Q., Li, B. (2009). Thermoelectric performance of silicon nanowires. Applied Physics Letters 94 (21) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3143616
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/98387
dc.description.abstractWith finite element simulation and analytic modeling, the thermoelectric performance of silicon nanowires (SiNWs) is studied. Large cooling temperature is observed which increases remarkably as thermal conductivity of SiNW decreases. Moreover, high cooling power density of 6.6× 103 W/ cm2 is achieved which is about 600 times larger than that of commercial thermoelectric modules. Moreover, SiNW cooler can reach the coefficient as high as 61%. All these features make SiNW a very promising material in application of on-chip temperature controlling and heat dissipating for hot spots inside integrated circuits. © 2009 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.3143616
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1063/1.3143616
dc.description.sourcetitleApplied Physics Letters
dc.description.volume94
dc.description.issue21
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000266500400052
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