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|Title:||Thermoelectric figure of merit in Ga-doped  ZnO nanowires||Authors:||Shi, L.
|Keywords:||Thermoelectric figure of merit
|Issue Date:||6-Feb-2012||Citation:||Shi, L., Chen, J., Zhang, G., Li, B. (2012-02-06). Thermoelectric figure of merit in Ga-doped  ZnO nanowires. Physics Letters, Section A: General, Atomic and Solid State Physics 376 (8-9) : 978-981. ScholarBank@NUS Repository. https://doi.org/10.1016/j.physleta.2011.12.040||Abstract:||By using first-principles electronic structure calculation and Boltzmann transport equation, we investigate the impact of gallium (Ga) doping on the thermoelectric property of  zinc oxide nanowires (Zn 1-xGa xO NWs). Our results show that the thermoelectric performance of the Zn 1-xGa xO NWs is strongly dependent on the Ga contents. The maximum achievable room temperature thermoelectric figure of merit in Zn 1-xGa xO NW can be increased by a factor of 2.5 at Ga content of 0.04, compared with the ZT of pure ZnO NWs. This may open up ZnO NW arrays applications in possible thermoelectric energy generator and cooler. © 2011 Elsevier B.V. All rights reserved.||Source Title:||Physics Letters, Section A: General, Atomic and Solid State Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/98386||ISSN:||03759601||DOI:||10.1016/j.physleta.2011.12.040|
|Appears in Collections:||Staff Publications|
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