Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2004.05.050
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dc.titleThermal stability of strained Si/Si1-xGex heterostructures for advanced microelectronics devices
dc.contributor.authorWong, L.H.
dc.contributor.authorWong, C.C.
dc.contributor.authorOng, K.K.
dc.contributor.authorLiu, J.P.
dc.contributor.authorChan, L.
dc.contributor.authorRao, R.
dc.contributor.authorPey, K.L.
dc.contributor.authorLiu, L.
dc.contributor.authorShen, Z.X.
dc.date.accessioned2014-10-16T09:46:16Z
dc.date.available2014-10-16T09:46:16Z
dc.date.issued2004-09
dc.identifier.citationWong, L.H., Wong, C.C., Ong, K.K., Liu, J.P., Chan, L., Rao, R., Pey, K.L., Liu, L., Shen, Z.X. (2004-09). Thermal stability of strained Si/Si1-xGex heterostructures for advanced microelectronics devices. Thin Solid Films 462-463 (SPEC. ISS.) : 76-79. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2004.05.050
dc.identifier.issn00406090
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/98370
dc.description.abstractThe thermal stability of strained Si/Si1-xGex epilayers with x=0.15 to 0.25 was investigated under various thermal annealing conditions. High Resolution (HR) X-ray Diffractometry (XRD) was used to determine the intrinsic strain of the heterostructure before any thermal treatment. The effect of thermal processing on strain relaxation and Ge diffusion was observed by Raman spectroscopy and Secondary Ion Mass Spectroscopy (SIMS). Strain analysis by Raman reveals no sign of Si strain relaxation for temperatures up to 1000 °C for 5 min. However, Ge diffusion into strained Si was detected by both Raman and SIMS. © 2004 Elsevier B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.tsf.2004.05.050
dc.sourceScopus
dc.subjectRaman
dc.subjectSilicon germanium
dc.subjectStrained silicon
dc.subjectThermal stability
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1016/j.tsf.2004.05.050
dc.description.sourcetitleThin Solid Films
dc.description.volume462-463
dc.description.issueSPEC. ISS.
dc.description.page76-79
dc.description.codenTHSFA
dc.identifier.isiut000223812800017
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