Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2937834
DC FieldValue
dc.titleThermal rectification at silicon-amorphous polyethylene interface
dc.contributor.authorHu, M.
dc.contributor.authorKeblinski, P.
dc.contributor.authorLi, B.
dc.date.accessioned2014-10-16T09:46:12Z
dc.date.available2014-10-16T09:46:12Z
dc.date.issued2008
dc.identifier.citationHu, M., Keblinski, P., Li, B. (2008). Thermal rectification at silicon-amorphous polyethylene interface. Applied Physics Letters 92 (21) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2937834
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/98363
dc.description.abstractUsing nonequilibrium molecular dynamics simulations, we study the thermal diode effect in a system composed of inorganic crystal and amorphous polymer by imposing a series of positive and negative heat currents. We estimate that in the limit of large heat currents, the silicon-amorphous polyethylene interfacial thermal conductance is about 19.6 and 13.5 MW m2 K at room temperature for heat flowing from polymer to silicon and from silicon to polymer, respectively, which results in thermal rectification of up to 45%. Vibrational analysis indicates that the origin of thermal rectification is in the strong temperature dependence of the frequency spectra of the polymer. © 2008 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.2937834
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1063/1.2937834
dc.description.sourcetitleApplied Physics Letters
dc.description.volume92
dc.description.issue21
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000256303500021
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