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https://doi.org/10.1063/1.2937834
Title: | Thermal rectification at silicon-amorphous polyethylene interface | Authors: | Hu, M. Keblinski, P. Li, B. |
Issue Date: | 2008 | Citation: | Hu, M., Keblinski, P., Li, B. (2008). Thermal rectification at silicon-amorphous polyethylene interface. Applied Physics Letters 92 (21) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2937834 | Abstract: | Using nonequilibrium molecular dynamics simulations, we study the thermal diode effect in a system composed of inorganic crystal and amorphous polymer by imposing a series of positive and negative heat currents. We estimate that in the limit of large heat currents, the silicon-amorphous polyethylene interfacial thermal conductance is about 19.6 and 13.5 MW m2 K at room temperature for heat flowing from polymer to silicon and from silicon to polymer, respectively, which results in thermal rectification of up to 45%. Vibrational analysis indicates that the origin of thermal rectification is in the strong temperature dependence of the frequency spectra of the polymer. © 2008 American Institute of Physics. | Source Title: | Applied Physics Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/98363 | ISSN: | 00036951 | DOI: | 10.1063/1.2937834 |
Appears in Collections: | Staff Publications |
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