Please use this identifier to cite or link to this item: https://doi.org/10.1039/c0nr00437e
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dc.titleThermal contraction in silicon nanowires at low temperatures
dc.contributor.authorJiang, J.-W.
dc.contributor.authorWang, J.-S.
dc.contributor.authorLi, B.
dc.date.accessioned2014-10-16T09:46:05Z
dc.date.available2014-10-16T09:46:05Z
dc.date.issued2010-11
dc.identifier.citationJiang, J.-W., Wang, J.-S., Li, B. (2010-11). Thermal contraction in silicon nanowires at low temperatures. Nanoscale 2 (12) : 2864-2867. ScholarBank@NUS Repository. https://doi.org/10.1039/c0nr00437e
dc.identifier.issn20403364
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/98352
dc.description.abstractThe thermal expansion effect of silicon nanowires (SiNW) in [100], [110] and [111] directions with different sizes is theoretically investigated. At low temperatures, all SiNW studied exhibit a thermal contraction effect due to the lowest energy of the bending vibration mode which has a negative effect on the coefficient of thermal expansion (CTE). The CTE in [110] direction is distinctly larger than the other two growth directions because of the anisotropy of the bending mode in SiNW. Our study reveals that CTE decreases with an increase of the structure ratio γ = length/diameter, and is negative in the whole temperature range with γ = 1.3. © 2010 The Royal Society of Chemistry.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1039/c0nr00437e
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1039/c0nr00437e
dc.description.sourcetitleNanoscale
dc.description.volume2
dc.description.issue12
dc.description.page2864-2867
dc.identifier.isiut000286167400054
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