Please use this identifier to cite or link to this item: https://doi.org/10.1088/0953-8984/5/9/003
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dc.titleThe multi-hole localization mechanism for particle emission from semiconductor surfaces
dc.contributor.authorKhoo, G.S.
dc.contributor.authorOng, C.K.
dc.contributor.authorItoh, N.
dc.date.accessioned2014-10-16T09:45:24Z
dc.date.available2014-10-16T09:45:24Z
dc.date.issued1993
dc.identifier.citationKhoo, G.S., Ong, C.K., Itoh, N. (1993). The multi-hole localization mechanism for particle emission from semiconductor surfaces. Journal of Physics: Condensed Matter 5 (9) : 1187-1194. ScholarBank@NUS Repository. https://doi.org/10.1088/0953-8984/5/9/003
dc.identifier.issn09538984
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/98296
dc.description.abstractThe authors have investigated the consequences of multi-hole localization at defect sites on the GaP(110) surface: the relaxation of the lattice and the emission of atoms due to bond breaking. It is shown that the combination of localization of two-hole states on a defect with cascade excitation results in emission of an atom from the defect. The results support the mechanism suggested by Hattori et al. (1990) of defect-initiated emission of Ga atoms under laser irradiation, of which the yield is a superlinear function of laser fluence.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1088/0953-8984/5/9/003
dc.description.sourcetitleJournal of Physics: Condensed Matter
dc.description.volume5
dc.description.issue9
dc.description.page1187-1194
dc.identifier.isiutA1993KR14100003
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