Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0921-5107(01)00618-3
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dc.titleThe impact of layer thickness of IMP-deposited tantalum nitride films on integrity of Cu/TaN/SiO2/Si multilayer structure
dc.contributor.authorLatt, K.M.
dc.contributor.authorLee, Y.K.
dc.contributor.authorLi, S.
dc.contributor.authorOsipowicz, T.
dc.contributor.authorSeng, H.L.
dc.date.accessioned2014-10-16T09:45:08Z
dc.date.available2014-10-16T09:45:08Z
dc.date.issued2001-07-20
dc.identifier.citationLatt, K.M., Lee, Y.K., Li, S., Osipowicz, T., Seng, H.L. (2001-07-20). The impact of layer thickness of IMP-deposited tantalum nitride films on integrity of Cu/TaN/SiO2/Si multilayer structure. Materials Science and Engineering B: Solid-State Materials for Advanced Technology 84 (3) : 217-223. ScholarBank@NUS Repository. https://doi.org/10.1016/S0921-5107(01)00618-3
dc.identifier.issn09215107
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/98282
dc.description.abstractThis work concentrates on the diffusion barrier stability of very thin tantalum nitride films with different thickness (10, 20 and 30 nm) sputter-deposited on silicon dioxide in the Cu/TaN/SiO2/Si multiplayer structure. The impact of varying layer thickness and influence of post deposition annealing on the crystal structure, resistivity, intermixing and reactions at the interfaces were studied by using resistivity analyses, X-ray diffraction, scanning electron microscopy and Rutherford backscattering spectrometry. The results revealed that the thinner the film thickness of tantalum nitride, the more severe the reactions at the interface of copper-tantalum nitride and consumed more conductive Cu. Accelerated grain growth and/or agglomerations were also observed in all Cu surfaces. All the structures show a similar degradation process and were found to be stable up to 450°C for 35 min. © 2001 Elsevier Science B.V.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/S0921-5107(01)00618-3
dc.sourceScopus
dc.subjectDiffusion barrier
dc.subjectIonized metal plasma (IMP)
dc.subjectTantalum nitride (TaN)
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1016/S0921-5107(01)00618-3
dc.description.sourcetitleMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
dc.description.volume84
dc.description.issue3
dc.description.page217-223
dc.description.codenMSBTE
dc.identifier.isiut000169672200014
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