Please use this identifier to cite or link to this item:
Title: The effects of nitrogen flow on the Raman spectra of polycrystalline diamond films
Authors: Zhang, Q.
Yoon, S.F.
Ahn, J.
Guo, Y.-P. 
Keywords: Polycrystalline diamond films
Raman scattering
X-ray diffraction
Issue Date: Nov-1998
Citation: Zhang, Q.,Yoon, S.F.,Ahn, J.,Rusli,Guo, Y.-P. (1998-11). The effects of nitrogen flow on the Raman spectra of polycrystalline diamond films. Microelectronics Journal 29 (11) : 875-879. ScholarBank@NUS Repository.
Abstract: The effects of nitrogen on the formation and structure of polycrystalline diamond films prepared using a microwave plasma chemical vapour deposition system have been studied using Raman scattering, X-ray diffraction and X-ray photoelectron spectroscopy. It is found that the Raman spectra are significantly affected by nitrogen flow ratio, while the X-ray diffraction spectra only show certain changes in their peak intensity. Five Raman scattering peaks at 1140, 1190, 1350, 1480 and 1550 cm-1, respectively, are clearly observed. With increasing nitrogen flow ratio, the 1480 cm-1 peak decreases significantly and the 1140 and 1190 cm-1 peaks remain almost unchanged in comparison with the 1350 and 1550 cm-1 peaks. These results indicate that nitrogen plays an important role in modifying the structure of polycrystalline diamond films. © 1998 Published by Elsevier Science Ltd. All rights reserved.
Source Title: Microelectronics Journal
ISSN: 00262692
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Google ScholarTM


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.