Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2004.05.009
Title: The decomposition mechanism of SiO2 with the deposition of oxygen-deficient M(Hf or Zr)Ox films
Authors: Li, Q.
Wang, S.J.
Lim, P.C.
Chai, J.W.
Huan, A.C.H. 
Ong, C.K. 
Keywords: Deposition
SiO2
XPS
Issue Date: Sep-2004
Citation: Li, Q., Wang, S.J., Lim, P.C., Chai, J.W., Huan, A.C.H., Ong, C.K. (2004-09). The decomposition mechanism of SiO2 with the deposition of oxygen-deficient M(Hf or Zr)Ox films. Thin Solid Films 462-463 (SPEC. ISS.) : 106-109. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2004.05.009
Abstract: The dynamic process of the reactions during deposition of M(Hf or Zr)O 2 thin films on SiO2-covered silicon substrate in oxygen deficient conditions has been investigated. A series of reactions across the interface were identified with thermodynamic arguments and with X-ray Photoelectron Spectroscopy (XPS) and transmission electron microscopy (TEM) analyses. The oxygen deficient MOx
Source Title: Thin Solid Films
URI: http://scholarbank.nus.edu.sg/handle/10635/98251
ISSN: 00406090
DOI: 10.1016/j.tsf.2004.05.009
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

5
checked on May 26, 2023

WEB OF SCIENCETM
Citations

4
checked on May 26, 2023

Page view(s)

200
checked on May 25, 2023

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.