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Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2004.05.009
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dc.titleThe decomposition mechanism of SiO2 with the deposition of oxygen-deficient M(Hf or Zr)Ox films
dc.contributor.authorLi, Q.
dc.contributor.authorWang, S.J.
dc.contributor.authorLim, P.C.
dc.contributor.authorChai, J.W.
dc.contributor.authorHuan, A.C.H.
dc.contributor.authorOng, C.K.
dc.date.accessioned2014-10-16T09:44:47Z
dc.date.available2014-10-16T09:44:47Z
dc.date.issued2004-09
dc.identifier.citationLi, Q., Wang, S.J., Lim, P.C., Chai, J.W., Huan, A.C.H., Ong, C.K. (2004-09). The decomposition mechanism of SiO2 with the deposition of oxygen-deficient M(Hf or Zr)Ox films. Thin Solid Films 462-463 (SPEC. ISS.) : 106-109. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2004.05.009
dc.identifier.issn00406090
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/98251
dc.description.abstractThe dynamic process of the reactions during deposition of M(Hf or Zr)O 2 thin films on SiO2-covered silicon substrate in oxygen deficient conditions has been investigated. A series of reactions across the interface were identified with thermodynamic arguments and with X-ray Photoelectron Spectroscopy (XPS) and transmission electron microscopy (TEM) analyses. The oxygen deficient MOx
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.tsf.2004.05.009
dc.sourceScopus
dc.subjectDeposition
dc.subjectSiO2
dc.subjectXPS
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1016/j.tsf.2004.05.009
dc.description.sourcetitleThin Solid Films
dc.description.volume462-463
dc.description.issueSPEC. ISS.
dc.description.page106-109
dc.description.codenTHSFA
dc.identifier.isiut000223812800023
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