Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3212966
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dc.titleTerahertz carrier dynamics and dielectric properties of GaN epilayers with different carrier concentrations
dc.contributor.authorGuo, H.C.
dc.contributor.authorZhang, X.H.
dc.contributor.authorLiu, W.
dc.contributor.authorYong, A.M.
dc.contributor.authorTang, S.H.
dc.date.accessioned2014-10-16T09:44:35Z
dc.date.available2014-10-16T09:44:35Z
dc.date.issued2009
dc.identifier.citationGuo, H.C., Zhang, X.H., Liu, W., Yong, A.M., Tang, S.H. (2009). Terahertz carrier dynamics and dielectric properties of GaN epilayers with different carrier concentrations. Journal of Applied Physics 106 (6) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3212966
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/98233
dc.description.abstractUsing terahertz time-domain spectroscopy, we measured the complex conductivity and dielectric function of n -type GaN with various carrier concentrations on sapphire substrate. The measured complex conductivity, which is due to the free carriers, is well fitted by simple Drude model. The contribution from the lattice vibration to the complex dielectric function increases with the decrease in free carrier concentration. A better fitting of the frequency-dependent complex dielectric response was obtained by considering both of the Drude and the classical damped oscillator model. © 2009 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.3212966
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1063/1.3212966
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume106
dc.description.issue6
dc.description.page-
dc.description.codenJAPIA
dc.identifier.isiut000270378100005
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