Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/98213
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dc.titleTamn states in internal superlattice surfaces
dc.contributor.authorSy, H.K.
dc.contributor.authorChua, T.C.
dc.date.accessioned2014-10-16T09:44:20Z
dc.date.available2014-10-16T09:44:20Z
dc.date.issued1994-02-02
dc.identifier.citationSy, H.K.,Chua, T.C. (1994-02-02). Tamn states in internal superlattice surfaces. Physica B: Physics of Condensed Matter 194-196 (PART 1) : 1301-1302. ScholarBank@NUS Repository.
dc.identifier.issn09214526
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/98213
dc.description.abstractWe consider a model of finite semiconductor superlattice with embedded well(s) of arbitrary width adjacent to internal potential barrier(s) of arbitrary height. Using envelope-function-approximation and solving recurrence relations, the explicit equation giving the electronic state energies is obtained. Numerical results are shown for finite GaAs ALxGa1-xAs superlattices with identical double embedded wells. © 1994.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.sourcetitlePhysica B: Physics of Condensed Matter
dc.description.volume194-196
dc.description.issuePART 1
dc.description.page1301-1302
dc.description.codenPHYBE
dc.identifier.isiutNOT_IN_WOS
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