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|Title:||Tamn states in internal superlattice surfaces||Authors:||Sy, H.K.
|Issue Date:||2-Feb-1994||Citation:||Sy, H.K.,Chua, T.C. (1994-02-02). Tamn states in internal superlattice surfaces. Physica B: Physics of Condensed Matter 194-196 (PART 1) : 1301-1302. ScholarBank@NUS Repository.||Abstract:||We consider a model of finite semiconductor superlattice with embedded well(s) of arbitrary width adjacent to internal potential barrier(s) of arbitrary height. Using envelope-function-approximation and solving recurrence relations, the explicit equation giving the electronic state energies is obtained. Numerical results are shown for finite GaAs ALxGa1-xAs superlattices with identical double embedded wells. © 1994.||Source Title:||Physica B: Physics of Condensed Matter||URI:||http://scholarbank.nus.edu.sg/handle/10635/98213||ISSN:||09214526|
|Appears in Collections:||Staff Publications|
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