Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.vacuum.2012.03.060
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dc.titleSynthesis and properties of close packed ZnO:Al submicro-rods deposited by pulsed laser ablation
dc.contributor.authorLiu, Z.W.
dc.contributor.authorOng, C.K.
dc.date.accessioned2014-10-16T09:43:59Z
dc.date.available2014-10-16T09:43:59Z
dc.date.issued2012-07-20
dc.identifier.citationLiu, Z.W., Ong, C.K. (2012-07-20). Synthesis and properties of close packed ZnO:Al submicro-rods deposited by pulsed laser ablation. Vacuum 86 (12) : 1924-1929. ScholarBank@NUS Repository. https://doi.org/10.1016/j.vacuum.2012.03.060
dc.identifier.issn0042207X
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/98183
dc.description.abstractAl-doped ZnO (AZO) semiconducting thin films consisting of perpendicularly aligned submicro-rods were deposited on silicon substrate by conventional pulsed laser ablation. No catalyst was used in this process. It was found that the rod structure can be grown at relatively high oxygen pressures (1-20 Torr) and relatively high substrate temperatures (550-700°C). Low resistivity and high carrier concentration can be obtained in these Al-doped ZnO rods with relatively high Al concentrations. Increasing Al doping reduces the electric resistivity and increase carrier concentration. The photoluminescence property measurement indicates an increased UV emission with a small amount Al doping and reduced UV emission with further increase of Al concentration. © 2012 Elsevier Ltd. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.vacuum.2012.03.060
dc.sourceScopus
dc.subjectPulsed laser deposition
dc.subjectSubmicro-rod
dc.subjectTransparent conducting semiconductor
dc.subjectZinc oxide
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1016/j.vacuum.2012.03.060
dc.description.sourcetitleVacuum
dc.description.volume86
dc.description.issue12
dc.description.page1924-1929
dc.description.codenVACUA
dc.identifier.isiut000308672000027
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