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|Title:||Synthesis and properties of close packed ZnO:Al submicro-rods deposited by pulsed laser ablation||Authors:||Liu, Z.W.
|Keywords:||Pulsed laser deposition
Transparent conducting semiconductor
|Issue Date:||20-Jul-2012||Citation:||Liu, Z.W., Ong, C.K. (2012-07-20). Synthesis and properties of close packed ZnO:Al submicro-rods deposited by pulsed laser ablation. Vacuum 86 (12) : 1924-1929. ScholarBank@NUS Repository. https://doi.org/10.1016/j.vacuum.2012.03.060||Abstract:||Al-doped ZnO (AZO) semiconducting thin films consisting of perpendicularly aligned submicro-rods were deposited on silicon substrate by conventional pulsed laser ablation. No catalyst was used in this process. It was found that the rod structure can be grown at relatively high oxygen pressures (1-20 Torr) and relatively high substrate temperatures (550-700°C). Low resistivity and high carrier concentration can be obtained in these Al-doped ZnO rods with relatively high Al concentrations. Increasing Al doping reduces the electric resistivity and increase carrier concentration. The photoluminescence property measurement indicates an increased UV emission with a small amount Al doping and reduced UV emission with further increase of Al concentration. © 2012 Elsevier Ltd. All rights reserved.||Source Title:||Vacuum||URI:||http://scholarbank.nus.edu.sg/handle/10635/98183||ISSN:||0042207X||DOI:||10.1016/j.vacuum.2012.03.060|
|Appears in Collections:||Staff Publications|
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