Please use this identifier to cite or link to this item:
Title: Synthesis and properties of close packed ZnO:Al submicro-rods deposited by pulsed laser ablation
Authors: Liu, Z.W.
Ong, C.K. 
Keywords: Pulsed laser deposition
Transparent conducting semiconductor
Zinc oxide
Issue Date: 20-Jul-2012
Citation: Liu, Z.W., Ong, C.K. (2012-07-20). Synthesis and properties of close packed ZnO:Al submicro-rods deposited by pulsed laser ablation. Vacuum 86 (12) : 1924-1929. ScholarBank@NUS Repository.
Abstract: Al-doped ZnO (AZO) semiconducting thin films consisting of perpendicularly aligned submicro-rods were deposited on silicon substrate by conventional pulsed laser ablation. No catalyst was used in this process. It was found that the rod structure can be grown at relatively high oxygen pressures (1-20 Torr) and relatively high substrate temperatures (550-700°C). Low resistivity and high carrier concentration can be obtained in these Al-doped ZnO rods with relatively high Al concentrations. Increasing Al doping reduces the electric resistivity and increase carrier concentration. The photoluminescence property measurement indicates an increased UV emission with a small amount Al doping and reduced UV emission with further increase of Al concentration. © 2012 Elsevier Ltd. All rights reserved.
Source Title: Vacuum
ISSN: 0042207X
DOI: 10.1016/j.vacuum.2012.03.060
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.