Please use this identifier to cite or link to this item:
|Title:||Switching in organic devices caused by nanoscale Schottky barrier patches||Authors:||Kunardi, L.
|Issue Date:||22-May-2005||Citation:||Kunardi, L., Troadec, C., Chandrasekhar, N. (2005-05-22). Switching in organic devices caused by nanoscale Schottky barrier patches. Journal of Chemical Physics 122 (20) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1899151||Abstract:||We have identified a possible electronic origin of metal filaments, invoked to explain the switching behavior of organic devices. Interfaces of two representative organics polyparaphenylene (PPP) and poly(2-methoxy-5-2-ethyl- hexyloxy-1,4-phenylenevinylene) with Ag are investigated using ballistic emission microscopy. Nanometer scale spatial nonuniformity of carrier injection is observed in ballistic electron emission microscopy images of both interfaces. The measured Schottky barrier (SB) appears to be consistent with metal states tailing into the gap of the PPP. We find that the SB values exhibit a distribution, even for the diodes with low ideality factors. The implications of this distribution on the measured physical properties of the diode are discussed, in light of work on devices of similar geometry, published in the literature. We also demonstrate that patches of low SB are likely to nucleate current filaments which can cause local ionization and are reported to be responsible for the switching behavior observed in metal-organic, metal-CuS and Ag-AgSe structures. © 2005 American Institute of Physics.||Source Title:||Journal of Chemical Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/98154||ISSN:||00219606||DOI:||10.1063/1.1899151|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 21, 2020
WEB OF SCIENCETM
checked on Feb 13, 2020
checked on Feb 16, 2020
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.