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|Title:||Surface transient effects in ultralow-energy O2 + sputtering of silicon||Authors:||Chanbasha, A.R.
|Keywords:||Secondary ion mass spectroscopy
|Issue Date:||Jul-2005||Citation:||Chanbasha, A.R., Wee, A.T.S. (2005-07). Surface transient effects in ultralow-energy O2 + sputtering of silicon. Surface and Interface Analysis 37 (7) : 628-632. ScholarBank@NUS Repository. https://doi.org/10.1002/sia.2058||Abstract:||It is known that by lowering the impact energy the sputter rate and surface transient width in SIMS will be reduced. However, few studies have been done at ultralow energies over a wide range of impact angles. This study examines the dependence of sputter rate and transient width as a function of O 2 + primary ion energy (Ep = 250 eV, 500 eV and 1 keV) and incidence angles of 0-70°. The instrument used is the Atomika 4500 SIMS depth profiler and the sample was Si with 10 delta-layers of Si 0.7Ge0.3. We observed that the lowest transient width of 0.7 nm is obtainable at normal and near-normal incidence with Ep ∼ 250 eV and Ep ∼ 500 eV. There is no significant improvement in transient width going down in energy from Ep ∼ 500 to ∼250 eV. The onset of roughening is also not obvious at Ep ∼ 250 eV over the whole angular range studied. Although the sputter rate during the surface transient is normally different from that at steady state, only at Ep ∼ 250 eV was it observed that the sputter rate remained fairly independent of depth. We conclude that the best working ranges to achieve a narrow transient width and accurate depth calibration are at Ep ∼ 250 eV/0° < θ < 20° and 500 eV/0° < θ < 10°. Copyright © 2005 John Wiley & Sons, Ltd.||Source Title:||Surface and Interface Analysis||URI:||http://scholarbank.nus.edu.sg/handle/10635/98146||ISSN:||01422421||DOI:||10.1002/sia.2058|
|Appears in Collections:||Staff Publications|
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