Please use this identifier to cite or link to this item:
https://doi.org/10.1002/sia.2058
Title: | Surface transient effects in ultralow-energy O2 + sputtering of silicon | Authors: | Chanbasha, A.R. Wee, A.T.S. |
Keywords: | Secondary ion mass spectroscopy Sputter rate Surface transient Ultralow energy |
Issue Date: | Jul-2005 | Citation: | Chanbasha, A.R., Wee, A.T.S. (2005-07). Surface transient effects in ultralow-energy O2 + sputtering of silicon. Surface and Interface Analysis 37 (7) : 628-632. ScholarBank@NUS Repository. https://doi.org/10.1002/sia.2058 | Abstract: | It is known that by lowering the impact energy the sputter rate and surface transient width in SIMS will be reduced. However, few studies have been done at ultralow energies over a wide range of impact angles. This study examines the dependence of sputter rate and transient width as a function of O 2 + primary ion energy (Ep = 250 eV, 500 eV and 1 keV) and incidence angles of 0-70°. The instrument used is the Atomika 4500 SIMS depth profiler and the sample was Si with 10 delta-layers of Si 0.7Ge0.3. We observed that the lowest transient width of 0.7 nm is obtainable at normal and near-normal incidence with Ep ∼ 250 eV and Ep ∼ 500 eV. There is no significant improvement in transient width going down in energy from Ep ∼ 500 to ∼250 eV. The onset of roughening is also not obvious at Ep ∼ 250 eV over the whole angular range studied. Although the sputter rate during the surface transient is normally different from that at steady state, only at Ep ∼ 250 eV was it observed that the sputter rate remained fairly independent of depth. We conclude that the best working ranges to achieve a narrow transient width and accurate depth calibration are at Ep ∼ 250 eV/0° < θ < 20° and 500 eV/0° < θ < 10°. Copyright © 2005 John Wiley & Sons, Ltd. | Source Title: | Surface and Interface Analysis | URI: | http://scholarbank.nus.edu.sg/handle/10635/98146 | ISSN: | 01422421 | DOI: | 10.1002/sia.2058 |
Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.