Please use this identifier to cite or link to this item: https://doi.org/10.1021/ja071658g
DC FieldValue
dc.titleSurface transfer p-type doping of epitaxial graphene
dc.contributor.authorChen, W.
dc.contributor.authorChen, S.
dc.contributor.authorDong, C.Q.
dc.contributor.authorXing, Y.G.
dc.contributor.authorWee, A.T.S.
dc.date.accessioned2014-10-16T09:43:31Z
dc.date.available2014-10-16T09:43:31Z
dc.date.issued2007-08-29
dc.identifier.citationChen, W., Chen, S., Dong, C.Q., Xing, Y.G., Wee, A.T.S. (2007-08-29). Surface transfer p-type doping of epitaxial graphene. Journal of the American Chemical Society 129 (34) : 10418-10422. ScholarBank@NUS Repository. https://doi.org/10.1021/ja071658g
dc.identifier.issn00027863
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/98144
dc.description.abstractEpitaxial graphene thermally grown on 6H-SiC(0001) can be p-type doped via a novel surface transfer doping scheme by modifying the surface with the electron acceptor, tetrafluoro-tetracyanoquinodimethane (F4-TCNQ). Synchrotron-based high-resolution photoemission spectroscopy reveals that electron transfer from graphene to adsorbed F4-TCNQ is responsible for the p-type doping of graphene. This novel surface transfer doping scheme by surface modification with appropriate molecular acceptors represents a simple and effective method to nondestructively dope epitaxial graphene for future nanoelectronics applications. © 2007 American Chemical Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1021/ja071658g
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1021/ja071658g
dc.description.sourcetitleJournal of the American Chemical Society
dc.description.volume129
dc.description.issue34
dc.description.page10418-10422
dc.description.codenJACSA
dc.identifier.isiut000249035200037
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