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|Title:||Surface transfer p-type doping of epitaxial graphene||Authors:||Chen, W.
|Issue Date:||29-Aug-2007||Citation:||Chen, W., Chen, S., Dong, C.Q., Xing, Y.G., Wee, A.T.S. (2007-08-29). Surface transfer p-type doping of epitaxial graphene. Journal of the American Chemical Society 129 (34) : 10418-10422. ScholarBank@NUS Repository. https://doi.org/10.1021/ja071658g||Abstract:||Epitaxial graphene thermally grown on 6H-SiC(0001) can be p-type doped via a novel surface transfer doping scheme by modifying the surface with the electron acceptor, tetrafluoro-tetracyanoquinodimethane (F4-TCNQ). Synchrotron-based high-resolution photoemission spectroscopy reveals that electron transfer from graphene to adsorbed F4-TCNQ is responsible for the p-type doping of graphene. This novel surface transfer doping scheme by surface modification with appropriate molecular acceptors represents a simple and effective method to nondestructively dope epitaxial graphene for future nanoelectronics applications. © 2007 American Chemical Society.||Source Title:||Journal of the American Chemical Society||URI:||http://scholarbank.nus.edu.sg/handle/10635/98144||ISSN:||00027863||DOI:||10.1021/ja071658g|
|Appears in Collections:||Staff Publications|
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