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https://doi.org/10.1021/ja071658g
Title: | Surface transfer p-type doping of epitaxial graphene | Authors: | Chen, W. Chen, S. Dong, C.Q. Xing, Y.G. Wee, A.T.S. |
Issue Date: | 29-Aug-2007 | Citation: | Chen, W., Chen, S., Dong, C.Q., Xing, Y.G., Wee, A.T.S. (2007-08-29). Surface transfer p-type doping of epitaxial graphene. Journal of the American Chemical Society 129 (34) : 10418-10422. ScholarBank@NUS Repository. https://doi.org/10.1021/ja071658g | Abstract: | Epitaxial graphene thermally grown on 6H-SiC(0001) can be p-type doped via a novel surface transfer doping scheme by modifying the surface with the electron acceptor, tetrafluoro-tetracyanoquinodimethane (F4-TCNQ). Synchrotron-based high-resolution photoemission spectroscopy reveals that electron transfer from graphene to adsorbed F4-TCNQ is responsible for the p-type doping of graphene. This novel surface transfer doping scheme by surface modification with appropriate molecular acceptors represents a simple and effective method to nondestructively dope epitaxial graphene for future nanoelectronics applications. © 2007 American Chemical Society. | Source Title: | Journal of the American Chemical Society | URI: | http://scholarbank.nus.edu.sg/handle/10635/98144 | ISSN: | 00027863 | DOI: | 10.1021/ja071658g |
Appears in Collections: | Staff Publications |
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