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Title: Surface transfer doping of diamond by MoO3: A combined spectroscopic and Hall measurement study
Authors: Russell, S.A.O.
Cao, L.
Qi, D.
Tallaire, A.
Crawford, K.G.
Wee, A.T.S. 
Moran, D.A.J.
Issue Date: 11-Nov-2013
Citation: Russell, S.A.O., Cao, L., Qi, D., Tallaire, A., Crawford, K.G., Wee, A.T.S., Moran, D.A.J. (2013-11-11). Surface transfer doping of diamond by MoO3: A combined spectroscopic and Hall measurement study. Applied Physics Letters 103 (20) : -. ScholarBank@NUS Repository.
Abstract: Surface transfer doping of diamond has been demonstrated using MoO 3 as a surface electron acceptor material. Synchrotron-based high resolution photoemission spectroscopy reveals that electrons are transferred from the diamond surface to MoO3, leading to the formation of a sub-surface quasi 2-dimensional hole gas within the diamond. Ex-situ electrical characterization demonstrated an increase in hole carrier concentration from 1.00 × 1013/cm2 for the air-exposed hydrogen-terminated diamond surface to 2.16 × 1013/cm 2 following MoO3 deposition. This demonstrates the potential to improve the stability and performance of hydrogen-terminated diamond electronic devices through the incorporation of high electron affinity transition metal oxides. © 2013 AIP Publishing LLC.
Source Title: Applied Physics Letters
ISSN: 00036951
DOI: 10.1063/1.4832455
Appears in Collections:Staff Publications

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